半导体可饱和吸收镜的光损伤阈值测量  

Measurement of Damage Threshold of Semiconductor Saturable-Absorber Mirrors

作　　者：李建萍[1] 曹士英[1] 吴祖斌[1] 王勇刚[1] 张志刚[1] 王清月[1] 赵友博[2] 朱晓农[2] 

机构地区：[1]天津大学精密仪器与光电子工程学院超快激光研究室,天津300072 [2]南开大学现代光学研究所,天津300071

出　　处：《纳米技术与精密工程》2005年第2期142-145,共4页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(60490280)

摘　　要：半导体可饱和吸收镜(SESAM)在飞秒脉冲激光器锁模中,是一种非常有潜力的锁模启动器.其损伤阈值的高低与连续锁模阈值比较相近,极易损伤,因而研究在飞秒激光作用下SESAM的损伤阈值很有必要.利用飞秒激光分别对单晶硅、自然生长SESAM及腐蚀后SESAM在50fs、200fs和400fs脉宽下进行了表面烧蚀研究,并且保证每次烧蚀的激光脉冲个数为50个.结果发现单晶硅和自然生长SESAM的损伤阈值要高于腐蚀后SESAM,随脉宽的增加而逐渐增大;而腐蚀后SESAM的损伤阈值却随脉宽的增加而逐渐减小.Semiconductor saturable-absorber mirrors(SESAM)are practical device for mode-locking of femtosecond pulses laser.However, the damage threshold of the SESAM is very close to that for continues wave(CW)mode-locking.Therefore, it is very important to measure and to improve the damage threshold.Using femtose-(cond) pulses laser, the damage threshold of them with 50 pulses is measured with a pulse duration of 50 fs, 200 fs and 400 fs respectively.The results show that the damage threshold of Si and SESAM as grown is higher than that of the etched SESAM, and increases with the pulse duration, whereas those for etched SESAM decrease with pulse duration.

关 键 词：半导体可饱和吸收镜 光损伤阈值 SESAM 飞秒脉冲激光器 测量 自然生长 飞秒激光 激光作用 表面烧蚀 单晶硅 锁模 阈值比 启动器 腐蚀 脉宽 

分 类 号：TN248.1[电子电信—物理电子学] O484.5[理学—固体物理]