SIMS测量激光诱导扩散Zn的浓度分布  

The SIMS Measurement of Zn Concentration Distribution Induced by Laser

作　　者：张雪琴[1] 吴云峰[1] 叶玉堂[1] 焦世龙[1] 

机构地区：[1]中国电子科技大学光电信息学院,成都610054

出　　处：《半导体技术》2005年第7期21-24,共4页Semiconductor Technology

基　　金：国家自然科学基金(60277008)教育部重点科技项目(03147)电科院资助项目(J.5.2.3)

摘　　要：通过SIMS对激光诱导扩散杂质浓度分布的研究,提出了一个测量扩散区只在μm量级或10μm 量级范围内的杂质浓度分布的方法。首先利用光刻的方法在基片表面标识出扩散窗口,然后进行激光诱导处理。用SIMS对制成的扩散样品定量分析,通过扫描探针显微镜测量刻蚀深度,由此实现了微小扩散区掺杂浓度-深度分布的研究。Using SIMS, the impurity concentration distribution induced by laser is investigated, a way of measuring diffused areas in the order of μm or10 u m was raised. By means of lithograph on the samples surface, the diffused windows were earmarked, and then the samples were dopped by laser assisted diffusion. Then the samples were analyzed quantitatively by SIMS. The etching depth was measured by scanning probe microscope. So, the research on concentration-depth distribution of extrasmall diffused areas is accomplished.

关 键 词：激光诱导扩散 微小扩散区 二次离子质谱仪 

分 类 号：TN304.07[电子电信—物理电子学]