TiO_2纳米晶的等离子体改性及光电转换性能的研究  

Study on the Photoelectrical Property of TiO_2 Thin Films by Ar Plasma Treatment

作　　者：韩俊波[1] 于国萍[1] 魏正和[1] 王取泉[1,2] 周正国[1] 

机构地区：[1]武汉大学物理系 [2]武汉大学纳米科学与技术研究中心,武汉430072

出　　处：《光学与光电技术》2005年第3期36-38,共3页Optics & Optoelectronic Technology

基　　金：湖北省自然科学基金(202130626)资助项目

摘　　要：用反应射频溅射法和涂敷法在导电玻璃上制备TiO2薄膜,并用Ar射频等离子体对TiO2薄膜进行处理。按“三明治”结构将TiO2工作电极、Pt/C对电极、0.5MKI+0.05MI2电解液组装成光电池,测量其开路电压和短路电流。结果表明经过Ar射频等离子处理后,溅射法和涂敷法制备的TiO2薄膜组装的光电池的光电流分别提高了约80%和60%。Nanocrystal TiO2 films were prepared by reactive RF sputtering and coating method, respectively. The samples were treated by Ar radio frequency plasma. The cells in a “sandwich” structure were assembled with a TiO2 working electrode, Pt/C composite counter electrode and 0.5 M KI + 0.05 M I2 electrolyte. By Ar plasma treatment, the photo-currents of sputtered and coated TiO2 electrodes increased by 80% and 60%, respectively.

关 键 词：等离子体处理 射频溅射 光电转换 纳米晶TiO2 

分 类 号：O484.4[理学—固体物理]