Poly-SiTFT有源驱动OLED单元像素电路的参数设计  

Parameters Design of Pixel Circuit for OLED ActiveMatrix Driving Array Based on Poly-Si TFT

作　　者：王丽杰[1] 张彤[1] 刘式墉[1] 

机构地区：[1]集成光电子国家重点实验室吉林大学实验区,长春130023

出　　处：《吉林大学学报（理学版）》2005年第3期338-342,共5页Journal of Jilin University:Science Edition

基　　金：吉林大学创新基金.

摘　　要：根据有机电致发光显示器件(OLED)的发光特性及多晶硅薄膜晶体管(Poly SiTFT)的工作特性, 对Poly SiTFT有源驱动OLED的源极跟随型双管单元像素驱动电路进行了理论计算和模拟仿真, 确定了单元像素中的各种器件参数; 通过AIM Spice的模拟仿真了整个像素电路工作状态, 对器件参数进行了优化.Basis on the characters of the OLED and poly-Si TFT, the values of the device parameters in the poly-Si TFT AM-OLED pixel circuit were determined by means of calculation and simulation. The pixel circuit was simulated with the software aim-spice, and the values of the device parameters were optimized.

关 键 词：多晶硅 薄膜晶体管 有机电致发光 有源驱动 仿真模拟 

分 类 号：TN27[电子电信—物理电子学] TN44