BNT铁电薄膜电容的制备及其特性研究  

Studies on the Preparation and Characteristic of BNT Ferroelectric Thin Films

作　　者：王宁章[1] 李兴教[2] 

机构地区：[1]广西大学计算机与电子信息学院,广西南宁530004 [2]华中科技大学电子系,湖北武汉430074

出　　处：《电子元件与材料》2005年第7期41-43,共3页Electronic Components And Materials

基　　金：广西大学基金资助项目(X002081);武汉理工大学材料复合新技术国家重点实验室资助项目

摘　　要：用脉冲激光淀积方法在p-Si基片上制备了高c轴取向的Bi4–xRxTi3O12(BNT)铁电薄膜,研究了掺钕量x对薄膜铁电性能的影响,结果表明,当x=0.80时,薄膜具有最大的剩余极化(Pr),在应用电压为10V时,Pr及Ec分别达到27×10–6C/cm2和70×103V/cm。在1MHz时,Au/BNT/p-Si(100)电容在读/写开关次数达到1010后表现出较好的抗疲劳特性。Highly c-axis oriented neodymium-modified bismuth titanate Bi3.20Nd0.80Ti3O12 (BNT) were successfully grown on p-SiO2 substrates by pulsed excimer laser deposition. Studied were ferroelectric properties of the c-axis oriented BNT film capacitors as a function of the Nd content. Results show that the capacitor with x= 0.80 has the largest remanent polarization. The remanent polarization (Pr) and the coercive field (Ec) of film are 27×10–6 C/cm2 and 70×103 V/cm at an applied voltage of 10 V, respectively. More importantly, the Au/BNT/p-Si(100) capacitor exhibits fatigue-free behavior up to 1010 read/write switching cycles at a frequency of 1 MHz.

关 键 词：电子技术 铁电薄膜 BNT 剩余极化 脉冲激光淀积 

分 类 号：TN304[电子电信—物理电子学]