硅中Jahn-Teller畸变的双空位超精细相互作用的理论计算  

THEORETICAL CALCULATIONS FOR HYPERFINE INTERACTIONS OF THE JAHN-TELLER DISTORTED DIVACANCY IN SILICON

作　　者：范希庆[1] 申三国[1] 张德萱 

机构地区：[1]郑州大学物理系

出　　处：《物理学报》1989年第6期914-922,共9页Acta Physica Sinica

摘　　要：采用扩展的Koster-Slate模型,分别对硅中双空位的两种重要的Jahn-Teller畸变模,计算了缺陷电荷态V_2^+,v_2^-中未配对电子的超精细相互作用常数a和b,给出与实验符合得很好的结果.由此还定出与实验相符合的能级和对称态:v_2^+的未配对电子处于能级约为0.3eV的Ag对称态;而V_2^-的电子处于能级约为0.63eV的Bu态;EG1模可能是v_2^+和v_2^-的最优选的畸变.For two main Jahn-Teller distortion modes of the divacancy in Si, hyperfine interactions of the unpaired electron of both negative and positive charged states (V2-,V2+) are calculated by using extended Koster-Slater model. The calculated results in agreement with the experiments are obtained., From these, we determe that the unpaired electron of V2+ is located at the symmetric state Ag of the energy level at 0.3eV and the V2- is located at the symmetric state Bu of the energy level at 0.63eV. We infer that the EG1 mode is the preferential mode of distortion for both V2- and V2+.

关 键 词：固体理论 硅中双空位 JAHN-TELLER 

分 类 号：O481[理学—固体物理]