红外探测器PT薄膜的实验研究  

TNE EXPERIMBNT RESEARCH OF PT THIN FILM USED IN INFRARED DETECTOR

作　　者：孙晓松[1] 孙晓楠[1] 

机构地区：[1]重庆建筑大学,重庆大学光机系

出　　处：《重庆建筑工程学院学报》1994年第3期13-16,共4页

摘　　要：对用于红外探测器和光声电子器件的ＰＴ薄膜的制备工艺及热处理过程进行了实验研究，对多离子束反应共溅射法制备薄膜，作了相应的ｘ衍射、ＸＰＳ能谱及ＥＰＭＡ分析。通过实验，成功地除去了薄膜中ＰｂＯ和焦绿石杂质，并改善了ＰｂＴｉＯ３（００１）的择优取向程度，从而为制备衬底温度的优这提供了依据。The preparation technology and thermal treatment PT thin film used in infrareddetector and photo-electron devices are studied. The er thin film prepared by multi-ion-beam reac-tive co-sputtering apparams are analysised by x-ray , XPS and EPMA. The impurity of PbO,Pb2Ti2O6 in PT thin film is eleminated and PbTiO3 (001)preferred orientation is improved. The rea-sonable teperature of substrates is given in this paper.

关 键 词：红外探测器 PT薄膜 实验 制备 

分 类 号：TN215[电子电信—物理电子学]