KOH溶液中(110)硅片腐蚀特性的研究  

Study on the Characteristics of the (110) Silicon Etched in KOH Solution

作　　者：贾翠萍[1] 董玮[1] 徐宝琨[1] 潘建旋[1] 周敬然[1] 陈维友[1] 

机构地区：[1]吉林大学电子科学与工程学院集成光电子国家重点实验室,长春130012

出　　处：《半导体技术》2005年第6期52-55,共4页Semiconductor Technology

基　　金：国家重点计划863项目(2002AA312023)

摘　　要：研究了在KOH溶液中(110)硅片的腐蚀特性,在保证(110)面的平整和｛111｝面的光滑的腐蚀实验条件下,利用(110)面和｛111｝面腐蚀选择比大,采用湿法腐蚀技术可以制作高深宽比结构的方式,在(110)硅片上设计制作出光开关用微反射镜。在腐蚀过程中光开关悬臂的凸角处产生了削角现象,利用表面硅原子悬挂键的分布特征对产生削角的原因作了合理解释,这为以后研究凸角补偿提供了理论依据。The characteristics of the (110) silicon etched in KOH solution is studied. On the experimental condition of the flat etched (110) plane and the smooth ｛111｝ planes, the high-respect- ratio structure can be fabricated due to the high etch ratio of the (110) plane to ｛111｝ planes. In this way, the micromirror for the optical switch can be fabricated in the (110) silicon. But when the beam of the optical switch is formed, undercut occurs on the convex. And it can be explained by the dangling bonds of the silicon atom, which is the basic theory for the further study of the convex compensation.

关 键 词：KOH溶液 (110)硅片 凸角 悬挂键 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]