可自校正失调电压的BiCMOS锁存比较器设计  

Design for a Self-Calibrating Offset Voltage BiCMOS Comparator

作　　者：李彦旭[1] 崔占忠[1] 徐立新[1] 陈曦[1] 

机构地区：[1]北京理工大学机电工程学院八五教研室,北京100081

出　　处：《半导体技术》2005年第6期67-69,共3页Semiconductor Technology

摘　　要：在对传统CMOS锁存比较器分析的基础上,设计了一种可自校正失调电压的BiCMOS锁存比较器,它既具有双极型电路快速、输入失调电压低和大电流驱动能力,又具备CMOS电路低功耗和高集成度的特性,因而它们特别适用于高速缓冲数字信息系统和其它便携式数字设备。A novel self-calibrating input offset voltage BiCMOS comparator is designed based on the analysis of the traditional CMOS comparator. The designed BiCMOS comparator can confirm the low power dissipation and high integrity of CMOS part, and have the advantage of high-speed, low input offset voltage and large driving ability of bipolar part, so the BiCMOS comparator is very suitable for high-speed digital information system and other hand-hold digital equipments.

关 键 词：双极互补金属氧化物半导体 输入失调电压 锁存比较器 

分 类 号：TN43[电子电信—微电子学与固体电子学]