p型单晶硅涂源掺锰新方法  

Study of Manganese Doped p-type Single Crystal Silicon in the Daubing Source

作　　者：崔志明[1] 巴维真[1] 陈朝阳[1] 蔡志军[1] 丛秀云[1] 

机构地区：[1]中国科学院新疆理化技术研究所

出　　处：《电子元件与材料》2005年第6期21-23,共3页Electronic Components And Materials

基　　金：国家外专局科研基金资助项目(20036500065);中国科学院"西部之光"人才培养计划项目

摘　　要：研究了扩散源的浓度与掺杂后硅材料补偿度之间的关系。以MnCl2·4H2O乙醇溶液为扩散源,涂在初始电阻率为3.8?·cm的p型单晶硅片表面,在高温(1200℃)下掺杂锰后,在室温避光条件下,用SDY—5型双电测四探针仪测样品电阻率ρ。改变扩散源的浓度重复实验,用XRD对扩散后的样品进行分析,结果表明:当硅片表面浓度为23.4×10–8mol/cm2时,扩散后样品体电阻率的径向不均匀度在5%以内,扩散后硅片的补偿度最大。MnCl2·4H2O ethanol solution was daubed to a surface of p-type single crystal Si disc of 3.8 ?·cm as a Mn dopant source, and the sample was heated at 1 200℃ to do Mn diffusion. Experiments were repeated by changing concentration of the solution and obtaining different surface density of daubed source. Resistivities of the doped samples were measured with SDY—5 four-probe device at room temperature and photophobic condition. The samples were also analyzed using X-ray diferaction method. Experimental results show that resistivity and compensation degree of the doped samples both obtain maximum values when surface density of the daubed source is 23.4×10–8 mol/cm2, while radial uniformity of resistivity of the sample is within 5%.

关 键 词：电子技术 扩散源 补偿度 固相反应 锰硅化物 

分 类 号：TN304[电子电信—物理电子学]