溅射功率和淀积时间对Mg_xZn_(1-x)O薄膜结构特性的影响  

Influence of sputtering power and deposition time on structure properties of Mg_xZn_(1-x)O films

作　　者：张锡健[1] 马洪磊[1] 王卿璞[1] 马瑾[1] 宗福建[1] 肖洪地[1] 计峰[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《山东大学学报（理学版）》2005年第3期49-52,共4页Journal of Shandong University(Natural Science)

基　　金：教育部博士点基金资助项目(20020422056)

摘　　要：用射频磁控溅射法在硅衬底上制备出MgxZn1xO薄膜,研究了溅射功率和淀积时间对薄膜结构特性的影响.X射线衍射(XRD)谱和原子力显微镜(AFM)图像表明:MgxZn1xO薄膜为六角纤锌矿结构,且具有非常好的沿垂直于衬底的c轴的择优取向.随着溅射功率和淀积时间的增加,X射线衍射峰的衍射角变大,半高宽(FWHM)减小,平均晶粒尺寸增加,薄膜结晶质量显著提高.Mg_xZn_ 1-xO films were prepared on silicon substrates by radio frequency magnetron sputtering. The influences of sputtering power and growth time on the structure properties of Mg_xZn_ 1-xO films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicat that Mg_xZn_ 1-xO films are of hexagonal wurtzite structure, and have a preferred orientation with the c axis, which is perpendicular to the substrate. While the sputtering power and growth time are increasing, the angle of diffraction peak becomes larger, the full width at half maximum (FWHM) of diffraction peaks reduces, the crystallite sizes become larger and the crystalline quality of the Mg_xZn_ 1-xO films is unambiguously improved.

关 键 词：MgxZn1-x O薄膜 射频磁控溅射 XRD AFM 

分 类 号：TN304.2[电子电信—物理电子学]