用Pendellosung条纹研究硅单晶中微缺陷  

CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELLOSUNG FRINGES

作　　者：李明[1] 麦振洪[1] 崔树范[1] 

机构地区：[1]中国科学院物理研究所

出　　处：《物理学报》1994年第1期78-83,T001,共7页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：以Ｘ射线衍射统计动力学为基础，讨论了一种用Ｘ射线截面形貌图测定静态Ｄｅｂｙｅ－Ｗａｌｌｅｒ因子的方法．通过仔细分析截面形貌图中Ｐｅｎｄｅｌｌｓｕｎｇ干涉条纹振荡周期和强度的变化，得到了经热处理后的ＣＺ硅和ＭＣＺ硅单晶样品的静态Ｄｅｂｙｅ－Ｗａｌｌｅｒ因子，并求得样品中氧沉淀的浓度和平均尺寸．这种定量化的研究方法为揭示晶体中微缺陷的性质及形成机理提供了新途径．Based on the statistical theory of X-ray dynamical diffraction,a method to ob-tain the static Debye-Waller facter from section topographs is described.By analy-zing the intensity distribution of the Pendellsung fringes in the X-ray diffractiontopograghs for heat treated CZ and MCZ silicon single crystals,the number densityand the size of the oxygen precipitates which are smaller than X-ray topographic re-solution are estimated.This quantitative analysis method provides a new means ofstudying the micro-defects.

关 键 词：硅单晶 微缺陷 X射线形貌术 

分 类 号：O771[理学—晶体学]