P型掺杂金刚石厚膜的电火花加工  

EDM of P-type Doped Diamond Thick Film

作　　者：曹振中[1] 左敦稳[1] 黎向锋[1] 卢文壮[1] 

机构地区：[1]南京航空航天大学机电学院,南京210016

出　　处：《人工晶体学报》2005年第3期565-570,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.50075039)

摘　　要：CVD金刚石具有和天然金刚石相近的一系列独特的力学、热学、声学、电学、光学和化学性能,在航空、航天、国防等高科技领域具有广阔的应用前景。但是,普通CVD金刚石膜是绝缘体,无法直接进行电加工。本文在分析了电火花加工半导体材料去除速率的基础上,通过掺硼对CVD金刚石厚膜进行半导体改性,继而实现了其电火花加工。通过研究,建立了掺硼金刚石厚膜电火花加工去除速率的经验公式。最后,通过Raman和SEM分析对CVD金刚石厚膜的电火花加工机理进行了初步探讨。Diamond has wide application prospects in the high-tech fields such as aeronautics, astronautics, national defense due to its excellent properties as compared with the natural diamond in mechanical, electrical, thermal, optical, acoustical and chemical aspects. Diamond film undoped is insulated so that it can not be processed by electrical discharge machining (EDM) method directly. On the basis of analyzing the semiconducting material removal rate of EDM and making semiconductive modification for CVD diamond thick film by boron-doping, EDM of the thick diamond film was realized. The empirical formula of the material removal rate for EDM of the diamond film was successfully established. The mechanism of EDM of CVD diamond film was analyzed by means of Raman and SEM.

关 键 词：金刚石厚膜 电火花加工 去除速率 掺硼 

分 类 号：TB43[一般工业技术] TG66[金属学及工艺—金属切削加工及机床]