大信号设计GaAs　MESFET功率合成  

The Design of internally Matched Power GaAs MESFET Based on Large-Signal Method

作　　者：傅炜[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1994年第1期22-27,共6页Research & Progress of SSE

摘　　要：利用ＧａＡｓＭＥＳＦＥＴ功率特性的线性化模型，求出ＧａＡｓＭＥＳＦＥＴ近似最佳功率负载阻抗，为利用谐波平衡法计算提供初值。然后，使用自行研制的谐波平衡分析软件包，进行ＧａＡｓＭＥＳＦＥＴ大信号模型参数的提取和非线性电路模拟计算。将两只总栅宽为９．６ｍｍ的ＧａＡｓＭＥＳＦＥＴ管芯，利用内匹配功率合成技术，在Ｃ波段（５．５～５．８ＧＨＺ）制成１ｄＢ压缩功率大于８Ｗ，典型功率增益９ｄＢ的ＧａＡｓＭＥＳＦＥＴ内匹配功率管。The GaAs MESFET approximate optimum power load impedance,which furnishes the initiative values to the harmonic balance simulation,has been calculated by using the GaAs MESFET linear power behavior model. The parameter values of the GaAs MESFET large-signal model are obtained and the nonlinearcircuit is simulated by the harmonic balance simulator. The internally matched method is applied to combin two GaAs MESFET chips,each with gate width of 9. 6mm. The C band(5. 5-5. 8 GHz) internally matched power GaAs MESFETs which deliver an output power at 1 dB gain compression point of 8 W with 9 dB powergain have been made.

关 键 词：功率合成 大信号模型 场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]