改进的二步法生长双层、异型硅外延材料  

Improved Two-Step Way for Growing Double-Layer,Heier-Type Si Epitaxial Structure

作　　者：王向武[1] 陆春一[1] 赵仲镛 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1994年第1期74-79,共6页Research & Progress of SSE

摘　　要：在双层、异型硅外延中，通常采用预通掺杂剂二步外延法。本文对掺杂剂预通过程中产生的气一固扩散进行理论及实验研究，分析了预通条件（温度、时间、预通量等）对气一团扩散的影响，提出了减小Ｐ－Ｎ过渡区改进的二步外延法。The two-step way of pre-entering dopant was usually used for double-layer, heier-type Si epitaxial structure. In this paper, the gas-solid diffusion produced during the pre-entering dopant has been studied theoretically and experimentally. The effect of pre-entering conditions on the gas-solid diffusion has been analyzed. The Improved two-step way of dicreased P-N transition region is given.

关 键 词：双层 异型 二步法 硅 外延生长 

分 类 号：TN304.054[电子电信—物理电子学]