未掺杂半绝缘GaAs中受主及电中性EL2分布的研究  

A Study on Distributions of Acceptor and Neutral EL2 in Undoped LEC SI GaAs

作　　者：杨瑞霞[1] 李光平[1] 

机构地区：[1]河北工学院,天津电子材料研究所

出　　处：《固体电子学研究与进展》1994年第2期151-155,共5页Research & Progress of SSE

摘　　要：测量了未掺杂半绝缘（ＳＩ）ＬＥＣＧａＡｓ中总的、电中性的ＥＬ２及净受主浓度分布和碳分布。结果表明，总ＥＬ２浓度径向分布呈Ｗ形而不是均匀的，净受主浓度径向分布呈∧形或∩形而不是Ｍ形。电中性ＥＬ２的Ｗ形径向分布由总ＥＬ２浓度的Ｗ形径向分布决定，而不是由于净受主的不均匀分布。有些样品中净受主浓度远大于碳浓度．意味着这些样品中除碳外还存在高浓度的其它受主。The distributions of total EL2 concentration,neutral EL2 concentration,net acceptor concentration and carbon concentration in undoped LEC SI GaAs have been measured. The results indicate that the radial distribution of total EL2 concentration is W-shaped instead of homogeneous, the radial distribution of net acceptor is ∧-shaped or ∩-shaped instead of M-shaped. In some samples,the concentration of net acceptor is much larger than that of carbon, which means that other acceptors besides carbon exist with high concentration.

关 键 词：EL2 砷化镓 未掺杂半绝缘 电中性 

分 类 号：TN304.23[电子电信—物理电子学]