本征α－Si：H中隙态的时间常数及俘获截面  

The Response Time and Capture Cross Section of the Gap States in the Un-doped α-Si:H

作　　者：刘坤[1] 褚君浩[1] 李标[1] 汤定元[1] 

机构地区：[1]中科院上海技术物理研究所红外物理国家重点实验室

出　　处：《固体电子学研究与进展》1994年第3期236-240,共5页Research & Progress of SSE

摘　　要：制成一批本征α－Ｓｉ：Ｈ的金属－绝缘体－半导体（ＭＩＳ）结构；用高精密差分电容谱仪测量了这种结构在５０℃时的电容、电导谱；通过修正获得了由隙态决定的电导并求得了隙态俘获电子的时间常数及截面。The metal-insulator-semiconductor (MIS) structure of α-Si: H has been made,and from which, the capacitance-voltage (C-V)and conductance-vol tage (G-V) characteristics have been measured at 50℃ and in the dark background.By revising the influence of the series resistance and the deep levels in the α-Si:H MIS device and from the general theory of MIS structures,the electron response time constant and the capture cross-section of the gap states have been obtained,which are in good agreement with other authors'.

关 键 词：隙态 本征 α-Si:H材料 半导体材料 

分 类 号：TN304.24[电子电信—物理电子学]