集成pH－ISFET／压力传感器的研究  

Investigations of an integrated PH-ISFET/Pressure Sensor

作　　者：丁辛芳[1] 俞海明[1] 

机构地区：[1]东南大学微电子中心

出　　处：《固体电子学研究与进展》1994年第3期250-254,共5页Research & Progress of SSE

摘　　要：基于ＳＤＢ／ＳＯＩ材料和硅微机械加工技术，提出了一种含微参比电极和择优差分补偿单元的背面引线ＰＨ－ＩＳＦＥＴ／压力传感器的新结构。并且设计了高稳定的可调芯片自恒温系统，以减少硅材料对温度敏感的效应。这种结构既方便地实现敏感元和信号处理电路的完全隔离，又有效地改善了敏感特性和稳定性。初步实验结果证实了新结构设计是成功的。By using the micromechanical techniques,a novel pH-ISFET/pressure sensor based on backside contacts has been recently made from SDB/SOI material.A selective differential element and microreference electrode were integrated on the same chip.A highly reliable adjustable temperature-constant system was also fabricated on it to reduce the temperature effect of silicon devices.The novel structure not only realizes the complete isolation of the sensitive elements from the signal processing circuits,but also sufficiently improves the stability and the sensitivity.The experiment results proved the feasibility of the novel structure.

关 键 词：PH-ISFET 集成传感器 压力传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]