硅尖阵列场致发射阴极及其二极管制备工艺初探  

Fabrications of Silicon Tip Arrays on the Silicon Substrate and Their Diodes

作　　者：王保平[1] 黄仲平[2] 蔡勇[2] 

机构地区：[1]东南大学,南京210018 [2]南京电子器件研究所,210016

出　　处：《光电子技术》1994年第3期204-210,共7页Optoelectronic Technology

摘　　要：随着大规模集成电路技术的发展,采用化学腐蚀的方法制备硅尖阵列及其二极管在真空微电子学中已被广泛采纳和应用。本文简要叙述了在各向同性腐蚀和各向异性腐蚀下硅尖形成的基本理论,讨论了硅尖形成的常用方法及其相关技术,扼要地介绍了硅尖阵列及其二极管制备过程中涉及到的重要工艺(如氧化锐化、平面化技术、静电键合和自对准工艺)。With the development of large scale IC,silicon tip arrays and their diodes fabricated by chemical etch methods are extensively used in the vacuum microelectronics. The basic theory of tips formation on the silicon substrate using isotropic or anisotropic etch solutions is described. The conventional fabrication techniques of silicon tip arrays and their relerant technol- ogy are discussed.Some important techniques being used to fabricate silicon tip arrays and diodes are introduced.

关 键 词：二极管 场致发射阴极 硅 

分 类 号：TN310.5[电子电信—物理电子学]