FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE  

作　　者：袁益让 

机构地区：[1]Institute of Mathematics Shandong University

出　　处：《Acta Mathematica Scientia》2005年第3期427-438,共12页数学物理学报（B辑英文版）

基　　金：This work is supported by the Major State Basic Research Program of China (19990328), the National Tackling Key Problem Program, the National Science Foundation of China (10271066 and 0372052), and the Doctorate Foundation of the Ministry of Education of China (20030422047).

摘　　要：Characteristic finite difference fractional step schemes are put forward. The electric potential equation is described by a seven-point finite difference scheme, and the electron and hole concentration equations are treated by a kind of characteristic finite difference fractional step methods. The temperature equation is described by a fractional step method. Thick and thin grids are made use of to form a complete set. Piecewise threefold quadratic interpolation, symmetrical extension, calculus of variations, commutativity of operator product, decomposition of high order difference operators and prior estimates are also made use of. Optimal order estimates in l2 norm are derived to determine the error of the approximate solution. The well-known problem is thorongley and completely solred.Characteristic finite difference fractional step schemes are put forward. The electric potential equation is described by a seven-point finite difference scheme, and the electron and hole concentration equations are treated by a kind of characteristic finite difference fractional step methods. The temperature equation is described by a fractional step method. Thick and thin grids are made use of to form a complete set. Piecewise threefold quadratic interpolation, symmetrical extension, calculus of variations, commutativity of operator product, decomposition of high order difference operators and prior estimates are also made use of. Optimal order estimates in l2 norm are derived to determine the error of the approximate solution. The well-known problem is thorongley and completely solred.

关 键 词：General region semiconductor device 3-dimensional heat conduction characteristic finite difference parallel fractional steps l^2 error estimate. 

分 类 号：O241[理学—计算数学]