射频磁控溅射高饱和磁化强度Fe-N薄膜  

Fe-N Thin Films with High Saturation Magnetization Deposited by Rrdio Frequeney Magnetron Sputtering

作　　者：姜恩永[1] 陈逸飞[1] 李志青[1] 白海力[1] 

机构地区：[1]天津大学现代材料物理研究所,天津300072

出　　处：《天津大学学报（自然科学与工程技术版）》2005年第7期573-576,共4页Journal of Tianjin University：Science and Technology

基　　金：国家自然科学基金资助项目(50072015);教育部专项研究博士点基金资助项目(20020056018).

摘　　要：用射频磁控溅射法分别在具有20nmFe衬底的Si(100)和NaCl单晶基片上成功地制备出具有高饱和磁化强度的Fe-N薄膜.用X射线衍射仪、透射电子显微镜和振动样品磁强计研究了氮气分压和基片温度对Fe-N薄膜相结构和磁性的影响.结果表明,当氮气分压为2.66×10-2Pa,基片温度为100~150℃时,最有利于α-″Fe16N2相的形成.在此条件下制备的Fe-N薄膜的饱和磁化强度高达2.735T,超过纯Fe的饱和磁化强度值.Fe-N thin films with high saturation magnetization were deposited on Si(100) and NaCl single (crystal) substrates with 20 nm thick Fe underlayers by radio frequeney(RF) magnetron sputtering. The effects of nitrogen partial pressure and substrate temperature on the phase structure and magnetic properties of the films were investigated by X-ray diffraction, transmission electron microscope and a vibrating sample magnetometer.The results show when nitrogen partial pressure and substrate temperature are 2.66×10^(-2) Pa and 100-150 ℃ respectively, it is most advantageous to form α″-Fe_(16)N_2 phase. The saturation magnetization of the Fe-N thin films deposited under these conditions is as high as 2.735 T, which is larger than that of pure iron.

关 键 词：FE-N薄膜 饱和磁化强度 射频磁控溅射 

分 类 号：O482.54[一般工业技术—材料科学与工程]