Ge衬底上GaInP_2材料的生长研究  

The Study of the Growth of GaInP_2 Materials on Ge Substrate

作　　者：李晓婷[1] 汪韬[1] 赛小锋[1] 张志勇[2] 

机构地区：[1]中国科学院西安光学精密机械研究所光电子学室 [2]西北大学电子工程系,西安710069

出　　处：《光子学报》2005年第6期909-911,共3页Acta Photonica Sinica

基　　金：国家自然科学基金(编号为60378020)资助项目

摘　　要：采用自制的低压金属有机化学汽相淀积LPMOCVD设备,在(100)面偏(110)面9°的Ge单晶衬底上外延生长了GaInP2材料,研究了生长温度、Ⅴ/Ⅲ比、生长速率等生长参数对GaInP2材料的表面形貌和固相组分的影响.结果表明,当GaInP2材料的生长温度为650～680℃,生长速率为25～35nm/min,Ⅴ/Ⅲ为180～220时,获得了满足级联电池的GaInP2材料.GaInP_2 materials had been obtained on Ge substrate (100) toward (110)miscut 9 degree by a home-made low pressure MOCVD system.Its growth condition was investigated,and the testing results show that growth temperature, Ⅴ/Ⅲ ratio and growth speed influence on surface morphology and solid composition of GaInP_2.The measurements indicate that growth temperature should be 650～680℃, Ⅴ/Ⅲ ratio should be 180～220, growth speed 25～35 nm/min. And the results shows that the nearly similar performance of GaInP_2 is obtained on both GaAs and Ge substrate.

关 键 词：LP-MOCVD GalnP2 Ge 材料 

分 类 号：O484.1[理学—固体物理]