4096位线阵CCPD摄像器件  

A 4096 Element Linear CCPD Image Device

作　　者：李作金[1] 杨亚生[1] 

机构地区：[1]重庆光电技术研究所

出　　处：《半导体光电》1994年第4期350-354,共5页Semiconductor Optoelectronics

基　　金：国防科工委预研项目资助

摘　　要：采用双线型三相埋沟结构，设计并研制成功４０９６位线阵ＣＣＰＤ摄像器件。器件动态范围达６００：１，暗电流密度为１０ｎＡ／ｃｍ￣２。文章阐述了该器件的工作原理、结构设计和制作工艺。A 4096 element linear CCPD image device has been successfully designed and fabricated with double-linear three phase buried-channel construction. The dynamic range of the device is up to 600: 1 with the dark current density of 10nA/cm2. In this paper,the principle of operation, design consideration and fabrication technology for the device are described.

关 键 词：CCPD 双线型结构 等平面工艺 摄像器件 

分 类 号：TN386.5[电子电信—物理电子学] TN948.41