电子束制作高分辨率波带片图形数据研究  

Study on Image Datum for High Resolution Zone Plates Fabricated by E-beam

作　　者：王德强[1] 康晓辉[1] 谢常青[1] 叶甜春[1] 

机构地区：[1]中国科学院微电子研究所微细加工与纳米技术实验室,北京100029

出　　处：《微细加工技术》2005年第2期28-33,共6页Microfabrication Technology

基　　金：国家自然科学基金资助项目(60236010;60290081;9027004)

摘　　要：根据圆环内部和相邻环分割单元之间的位置关系,设计了无间隙拼接处对齐和错开、有间隙拼接处对齐和错开四种结构模型。通过分析和比较这四种不同结构的高分辨率波带片图形数据,给出图形数据量和剖分单元数的变化关系曲线。根据扫描电子显微镜得到的实验结果,决定采用无间隙拼接处错开的模型。在使用负性抗蚀剂SAL601,电子束曝光剂量35μC,前烘温度75℃等条件下,制作出了最外环宽度为250nm的波带片。Based on the position relationship of internal units in circle and consecutive circles, four models are introduced-connection aligning, connection staggering and separation aligning, separation staggering. The curve distribution about the image datum and unit numbers is given, through analyzing and comparing the layout data of the four models. According to the experiment results acquired from the SEM, connection staggering is used to design high resolution zone plates. The outermost width of 250 nm zone plates is fabricated under conditions of negative resist SAL601, E-beam exposure dose 35 μC, and pre-baking temperature 75°C, etc.

关 键 词：电子束 波带片 双曝光 临近效应 

分 类 号：TN305.7[电子电信—物理电子学]