低介电常数氟化非晶碳薄膜热稳定性的研究  

Study on the Thermal Stability of a-C:F Thin Film

作　　者：刘雄飞[1] 张云芳[1] 肖剑荣[1] 李幼真[1] 

机构地区：[1]中南大学物理科学与技术学院,长沙410083

出　　处：《微细加工技术》2005年第2期51-54,62,共5页Microfabrication Technology

摘　　要：以CF4和CH4的混合气体为源气体,以Ar为工作气体,用射频等离子体增强化学气相沉积法(rf-PECVD)制备了氟化非晶碳(a-C:F)薄膜,并在Ar气氛中对不同温度下沉积的薄膜进行了退火处理,以考察其热稳定性.用椭偏仪测量了薄膜的厚度,比较了退火前后膜厚的变化;用傅里叶变换红外光谱仪(FTIR)对薄膜进行了分析,发现当退火温度达到350℃时,位于2 900cm-1附近的三个吸收峰几乎全部消失,随着射频功率的增加,980 cm-1～1 350 cm-1范围内的CFx(x=1,2,3)峰向低频方向移动;用原子力显微镜(AFM)观察了不同沉积温度下和经不同退火温度处理后薄膜表面形貌的变化,发现随沉积温度的升高,薄膜表面变得均匀,退火后的薄膜表面比没有退火的薄膜表面平坦.Using the mixture of CF4 and CH4 as the source gases and Ar as the carrier gas, a-C:F thin film was fabricated by the method of rf-PECVD, the thin films deposited in different temperature were annealed in Ar environment in order to investigate the thermal stability. The film thickness was measured with the ellipsometer, comparing the change of it. Analyzing the film by FTIR, it was found that three absorptance peaks about 2900 cm-1 almost disappeared when the annealing temperature was 350°C and CFx (x = 1, 2, 3) peaks among 980 cm-1~1350 cm-1 moved towards the lower frequency when if power increased. The topography change of the films obtained under the different deposition temperatures and annealing temperatures is observed by AFM. The observed results showed that the film surface become more uniform while the deposition temperature increased and the surface after annealing was flatter than one before annealing.

关 键 词：RF-PECVD a-C:F薄膜 热稳定性 

分 类 号：TN304.055[电子电信—物理电子学]