基底偏压对氮化硼薄膜场发射特性的影响  

Influence of Substrate Bias on Field Emission Characteristics of Boron Nitride Thin Films

作　　者：顾广瑞[1] 李英爱[2] 林景波[1] 李全军[1] 李哲奎[1] 郑伟涛[3] 赵永年[2] 金曾孙[2] 

机构地区：[1]延边大学理工学院,吉林省延吉133002 [2]吉林大学超硬材料国家重点实验室,长春130012 [3]吉林大学材料科学与工程学院,长春130012

出　　处：《吉林大学学报（理学版）》2005年第4期513-516,共4页Journal of Jilin University:Science Edition

基　　金：国家863项目基金(批准号:2002AA305507).

摘　　要：利用射频磁控溅射方法,在n型(100)Si(0.008~0.02Ω.m)基底上沉积了氮化硼(BN)薄膜.红外光谱分析表明,BN薄膜结构均为六角BN(h-BN)相.在超高真空系统中测量了BN薄膜的场发射特性,发现BN薄膜的场发射特性与基底偏压关系很大,阈值电场随基底偏压的增加先增加后减小.基底偏压为-140V时BN薄膜样品场发射特性要好于其他样品,阈值电场低于8V/μm.F^N曲线表明,在外加电场的作用下,电子隧穿BN薄膜表面势垒发射到真空.Boron nitride(BN) thin films were prepared on the (100)-oriented surface of n-Si(0.0080.02 Ωm) by means of R.F. magnetron sputtering physical vapor deposition(PVD). There are only two absorption peaks of h-BN at about 1 380 cm^(-1) and 780 cm^(-1) in Fourier transform infrared (FTIR) spectra of the BN thin films. The field emission characteristics of BN thin films were measured in a super high vacuum system. It has been found that the field emission characteristics of BN thin films depended evidently on substrate bias. The threshold electric field increases first and then decreases with substrate bias increasing. The lowest threshold (electric) field is 8 V/μm for the BN film deposited at a substrate bias of -140 V, respectively. It has been shown that electrons are emitted from BN thin film to vacuum tunneling through the potential barrier at the (surface) of BN thin film under exterior electric field by Fowler-Nordheim (F^N) plots.

关 键 词：BN薄膜 场发射 偏压 粗糙度 

分 类 号：O647.2[理学—物理化学]