孪生对靶溅射ZnO∶Al薄膜的研究  

Research on ZnO∶Al(ZAO) thin films sputtered by twin targets

作　　者：薛玉明[1] 刘维一 朴英美[1] 李凤岩[1] 何青[1] 周志强[1] 孙云[1] 

机构地区：[1]南开大学光电子所,天津300071

出　　处：《真空》2005年第4期12-14,共3页Vacuum

摘　　要：采用对向孪生靶溅射ZnO∶Al(ZAO)薄膜可减少等离子体对基底薄膜轰击损伤,沉积速率与结晶程度高;不同气压溅射的ZAO薄膜,其透光率在波长小于700 nm时基本相同,在可见光范围内(400～700 nm),都大于80%.其中,在550 nm时的透过率大于90%;入射光大于700 nm时,ZAO较厚的薄膜对红外的吸收更多;溅射气压为2 Pa比1 Pa沉积速率低,但薄膜电子迁移率较大、电阻率低,更适合做CIS薄膜太阳电池窗口层或透明导电膜.To reduce the damage to thin films on substrate due to plasma bombardment the twin targets were used to sputter ZnO∶Al(ZAO) films, which has the advantages of high deposition rate and crystallinity. Testing results showed that the transmittances of the ZAO thin films deposited under different pressures are nearly the same when the wavelength is less than 700nm, ie., they are all over 80% then the wavelength is ranging from 400nm to 700nm or the visible region. In particular the transmittance is over 90% when the wavelength is 550nm. If the wavelength of incident light is over 700nm, the thicker the ZAO film, the more the infrared light absorbed. Moreover, the deposition rate at sputtering pressure 2Pa is lower than that at 1Pa, but the film's electron mobility becomes higher with lower resistivity. Thus, such films are more applicable to be used for CIS thin-film solar cell's widow or transparent conductive film.

关 键 词：ZNO 孪生对靶 透过率 

分 类 号：TN304[电子电信—物理电子学] TN305.8