磁控溅射法制备含氦钛膜及膜中氦的热解吸研究  

Preparation of Ti Alloy Films Containing He by Magnetron Sputtering Method and Thermodesorption Research for He in the Films

作　　者：郑华[1] 刘实[1] 于洪波[1] 朱跃进[1] 王隆保[1] 施力群[2] 刘超卓[2] 

机构地区：[1]中国科学院金属研究所,辽宁沈阳110016 [2]复旦大学现代物理研究所,上海200433

出　　处：《原子能科学技术》2005年第B07期88-93,103,共7页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(50131050;50471078)

摘　　要：采用He/Ar复合气氛下磁控溅射方法,在Ti、TiZrYAl和TiMoYAl等3种薄膜中引入浓度(氦金属比)高达0.19的氦。引入的氦在膜层内沿深度均匀分布,并主要存在于直径为2～5nm的高压He泡内。热解吸实验表明,在相同He含量下,TiHe膜中He的解吸峰温度与氚化钛中衰变产生的3He的解吸峰温度基本一致。与纯钛相比,合金膜中氦的热解吸谱宽化明显,表明He在合金膜内的捕获形式更为复杂。High concentration helium, up to 0.19 (He-M ratio), was introduced into Ti films by magnetron sputtering method in a He/Ar complex atmosphere. The introduced helium distributes homogeneously in the films and mainly forms small helium bubbles. Helium thermodesorption experiments were carried out, and the results show that the thermodesorption properties of the introduced 4He are similar to those of radiogenic 3He in titanium tritides. Titanium alloy films containing helium were also prepared by this way and a comparison of thermodesorption properties between them and TiHe films was made.

关 键 词：磁控溅射 Ti膜 氦 热解吸 

分 类 号：O484.5[理学—固体物理]