PtSi单片式红外CCD  

PtSi Monolithic Infrared CCD

作　　者：石明金[1] 

机构地区：[1]重庆光电技术研究所

出　　处：《半导体光电》1989年第3期6-10,共5页Semiconductor Optoelectronics

摘　　要：本文讨论单片式 PtSi—Si(p)SB IRCCD 的工作机理、芯片结构、制备工艺及其性能改善,该器件适用于3～5μm 红外光谱区的热成像。本文还讨论了带新型光学共振腔结构的 PtSi 肖特基势垒光探测器阵列的制作与特性,最后介绍了该两维红外焦平面阵列(FPA)的应用及发展动向。The operation principle,chip layout and the fabrication technique as well as performance impiovement of the monolithic infrared charge coupled device (IR-CCD)with platinum silicids(PtSi)—p-silicon Scottky barrier photo- detectors(SBDts)are descussed.These devices can be used for thermal imaging in the 3-5μm band.The fabrication technique and the perfotmance of PtSi SBD′s array with a new type optical resonant cavity structure are also described.Finally, the aplication and development tendency of these two-dimensional infrared focal plan arrays(FPAts)are presented.

关 键 词：CCD 光探测器 结构 成像 

分 类 号：TN386.5[电子电信—物理电子学]