探测功率10^(-10)W的光电器件的计算与设计  

Calculation and Design of Photodiode with Noise Equivalent Power of 10^(-10)W

作　　者：陈定钦[1] 

机构地区：[1]中国科学院半导体所

出　　处：《半导体光电》1989年第4期56-61,共6页Semiconductor Optoelectronics

摘　　要：本文计算和比较了 Ge、Si、GaAs 器件的热噪声、信号电压、信/噪比、得到了制造功率为10^(-10)W 光电探测器的有效途径和实验方案。认为采用 P^+型衬底、外延高阻 P 型 Si、或用电阻率2Ω-cm 的 P 型 Si,制作光电倍增(雪崩)二极管,可以探测最小功率为10^(-)W,此时信/噪比达到1:4,电流灵敏度可提高10倍。Calculated and compared heat noise,signal voltage,signal-to-noise ratio of Ge,Si,GaAs devices,available approach and experimental plan for making noise equivalent power of 10^(-10)W are obtained.It has been found that adopted photomuhiplication(avalanche)diodes are able to realize noise equivalent power of 10^(-10)W and signal-to-noise ratio(S/N)1:4.The sensitivity of current can be enhanced about 10 times.The devices are made of epitaxial P type silicon film on heavily doped P type silicon substrate or P^+silicon with resistivity fo 2Ω·cm.

关 键 词：光电器件 计算 设计 光电探测器 

分 类 号：TN15[电子电信—物理电子学]