PIN结构自扫描光电二极管列阵  

Self-scanned photodiode array with PIN structure

作　　者：何清义[1] 黄友恕[1] 吕果林[1] 朱维安[1] 

机构地区：[1]重庆大学光机所

出　　处：《半导体光电》1995年第3期260-264,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金青年资金

摘　　要：从自扫描光电二极管列阵（ＳＳＰＡ）的工作原理出发，提出采用外延、离子注入、推阱的技术，研究一种新颖的高响应度的ＰＩＮ结构的ＳＳＰＡ器件，详细的分析了工艺设计方案和实验方法，最后提供了样品的测试参数。The operation principle of self-scanned photodiode array(SSPA) is described firstly in this paper. By employing the epitaxy ,ion implantation and diffusion technologies ,we have fabricated a new type of SSPA device with PIN structure which has high responsibility. Process design and experimental methods are discussed in detail. The measured parameters of this type of device sample are obtained in the end of the paper.

关 键 词：图像传感器 PIN光电二极管 外延生长 离子注入 

分 类 号：TN364.2[电子电信—物理电子学]