GaAs／AlGaAs多量子阱二维面阵红外探测器  

GaAs/AlGaAs Multiquantum well Infrared Detecter Array

作　　者：李晋闽[1] 郑海群[1] 曾一平[1] 孔梅影[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1995年第1期48-51,共4页半导体学报（英文版）

摘　　要：本文报道１０×１６元二维面阵ＧａＡｓ／ＡｌＧａＡｓ多量子阱红外探测器的研究进展．通过表面光栅耦合，采用垂直入射的工作模式，在Ｔ＝８０Ｋ时探测率为２．９×１０（１０）ｃｍ·Ｈｚ（１／２）／Ｗ，电压响应率为１．３×１０４Ｖ／Ｗ．各测试单元间探测率和电压响应率的偏差小于１８％，串音小于０．４５％，在最大探测率偏置条件下，器件的暗电流密度为６．２×１０（－６）Ａ／ｃｍ２．Abstract ?6 GaAs/AlGaAs quantum well infrared detector arrays with peak responsivity at 9. 3 μm have been achieved with front-side normal illumination based on a waveguide of doubly periodic grating coupler. A peak detectivity and high responsivity have been obtained at T=80 K. The dark current densities of the detectors in the array are smaller than 6. 2 ×10-6 A/cm2 with the detectors biased for maximum detectivity.

关 键 词：红外探测器 量子阱 砷化镓 砷化镓铝 

分 类 号：TN215[电子电信—物理电子学]