Si_（0．5）Ge_（0．5）合金的热氧化物的研究  

Investigation of Thermal Oxides Formed from SiGe Alloy

作　　者：邢益荣[1] 崔玉德[1] 殷士端[1] 张敬平[1] 李侠[1] 朱沛然[1] 徐田冰 

机构地区：[1]中国科学院半导体研究所,中国科学院物理研究所,英国Surrey大学电子工程系

出　　处：《Journal of Semiconductors》1995年第7期491-495,共5页半导体学报（英文版）

摘　　要：利用卢瑟福背散射（ＲＢＳ）、Ｘ光电子谱（ＸＰＳ）和俄歇电子能谱（ＡＥＳ）分析，研究了Ｓｉ０．５Ｇｅ０．５合金在１０００℃下湿氧化所生成的氧化物的特征．结果表明：这种氧化物为双层结构．靠近表面的一层为（Ｓｉ，Ｆｅ）Ｏｘ混合层，在其下面是纯的ＳｉＯｘ层，Ｇｅ被排斥并堆积在ＳｉＯｘ／Ｓｉ０．５Ｇｅ０．５界面附近．在本实验条件下，（Ｓｉ，Ｇｅ）Ｏｘ层的厚度约为２５００Ａ，它的形成时间不足５分种．当氧化的时间延长时，ＳｉＯｘ的厚度随之增加，但（Ｓｉ，Ｇｅ）Ｏｘ的厚度几乎不变．还发现：在这些氧化物中，Ｓｉ２ｐ和Ｇｅ３ｄ芯能级的化学位移比在单晶Ｓｉ和Ｇｅ上生长的ＳｉＯｘ和ＧｅＯ２中相应的值明显增大。Abstract RBS,XPS and AES were used to study the characteristics of thermal oxides formed from SiGe alloy at 1000℃ in wet oxygen.Experimental results show that oxidation of St0.5 Ge0.5 alloy resulted in formation of a double layer structure:a top(Si,Ge)Ox mixed oxides followed by a pure SiOx layer.Ge atoms were found to be repelled and piled up near the SIOx/Si0.5Ge0.5 interface.The(St,Ge)Ox layer was formed with thickness about 2500A in the initial oxidation stage of about 5 min.The thickmess of the SiOx layer increased with increasing the oxidation time,remaining the thickness of the(Si,Ge)Ox layer nearly unchangeable.We also found that,in these oxides,the chemical shifts of Si 2p and Ge 3d core levels were significantly larger than those in SiO2 and GeO2 formed from Si and Ge crystals.

关 键 词：半导体材料 硅锗合金 热氧化物 

分 类 号：TN304[电子电信—物理电子学]