表面势阱对硅场发射的影响  

Influence of Surface Potential Well on Field Emission from Silicon

作　　者：黄庆安[1] 

机构地区：[1]东南大学微电子中心

出　　处：《Journal of Semiconductors》1995年第8期587-593,共7页半导体学报（英文版）

基　　金：东南大学青年科学基金

摘　　要：本文比较了半导体硅与金属场发射过程的差别，建立了表面势阱作用下硅场致发射的基本方程．用ＷＫＢ近似，求出了硅场致发射的电流－电场关系．Abstract Field emission from metals is compared with that from silicon. Basic equation for field emission from silicoll is developed in which the surface potential well is considered. The emitted ctlrrent--field dependence is obtained on the basis of the WKB approximation.

关 键 词：硅 场发射 表面势阱 半导体表面 

分 类 号：O472.1[理学—半导体物理]