稀磁半导体Cd_（1－x）Fe_xTe的巨法拉第效应  

Giant Faraday Effect in Diluted Magnetic Semiconductor Cd_(1-x)Fe_xTe

作　　者：王学忠[1] 王荣明[1] 陈辰嘉[1] 马可军[1] 

机构地区：[1]北京大学物理系,中国科学院上海技术物理研究所

出　　处：《Journal of Semiconductors》1995年第11期835-841,共7页半导体学报（英文版）

摘　　要：在７０－３００Ｋ温度范围内测量研究了组分ｘ为０．０１，０．００３和０．０６的稀磁半导体Ｃｄ１－ｘＦｅｘＴｅ的法拉第旋转与入射光子能量、温度和组分的关系．首次用多振子模型拟合实验结果，获得了布里渊区Γ点的激子能量Ｅθ和Ｌ点的能隙Ｅ１随组分ｘ的变化规律和Ｅ０的温度关系．讨论了Ｆｅ＋＋离子内部能级间跃迁对实验结果的影响．Abstract Faraday effect as a function of photon energy, composition and temperature has been measured and studied for diluted magnetic semiconductor Cd1-xFexTe wih x =0. 01,0. 03, 0. 06 in the temperature range of 70K-300K. Exciton energy E0 at the Г Point and the band gap E1 at L point in the Brillouin zone are obtained by using a multioscillator model fitting with experiment results for the first time. The multioscillator model explains the measured behavior of the Faraday effect. The observed change in the sign of the Verdet constant of Cd1-xFex Te as a function of photon energy and the effect of the Fe++ ion intraband transition on Faraday rotation are discussed.

关 键 词：稀磁半导体 巨法拉第效应 CdFeTe 半导体材料 

分 类 号：TN304.3[电子电信—物理电子学]