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作 者:陈祥君[1] 杨宇[1] 龚大卫[1] 陆昉[1] 王建宝[1] 樊永良[1] 盛篪[1] 孙恒慧
机构地区:[1]复旦大学应用表面物理国家重点实验室,复旦大学李政道物理综合实验室
出 处:《Journal of Semiconductors》1995年第11期826-830,共5页半导体学报(英文版)
摘 要:利用硅分子束外延技术和B2O3掺杂源,成功地实现了硅中的硼δ掺杂,硼δ掺杂面密度NB可达3.4×1014cm-2(1/2单层)以上,透射电镜所示宽度为1.5nm.我们首次用原位俄歇电子能谱(AES)对硼在Si(100)表面上的δ掺杂行为进行了初步的研究,发现在NB<3.4×1014cm-2时,硼δ掺杂面密度与时间成正比,衬底温度650℃,掺杂源温度9000℃时,粘附速率为4.4×1013cm-2/min;在NB>3.4×1014cm-2时,粘附有饱和趋势,测量表明在硼δ掺杂面密度NB高达4.4×1014cm-2,都未观察到氧.我们还用反射式高能电子衍射(RHEED)和C-V测试对硼δ掺杂样品进行了观察.Abstract We have successfully realized boron δ-function-shaped doping in silicon epilayer grown by molecular beam epitaxy with a B2O3 doping source. The sheet carrier concentration NB of the boron a doping layer can exceed 3. 4×1014cm-2,Transimission electron microscopy (TEM) cross-section picture shows that the width of the & doping layer is 1.5nm. Meanwhile,we have firstly applied in situ Auger electron spectroscopy (in situ AES) to quantitatively analyze the relationship of boron δ doping sheet carrier concentration NB and the a doping time. For NBM 3. 4×1014cm-2 (1/2 monolayer),the boron incorporation onto Si (100) at the substrate temperature of 650℃and the doping source temperature of 900℃ is proportional to the doping time,and the sticking coefficient is 4. 4×1013cm-2/min; while for NB>×1014cm-2, the incorporation tends to saturate. The residual oxygen hasn't been detected even NB is up to 4. 4×1014cm-2. Reflection high energy electron diffraction (RHEED) and C-V measurements are also applied to characterize the boron δdoping layer.
分 类 号:TN304.12[电子电信—物理电子学]
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