AIN薄膜的成分、相结构和氧化性能  

ON THE COMPOSITION, PHASE STRUCTURE AND OXIDIZED PROPERTY OF AIN FILMS

作　　者：夏立芳[1] 王佐诚[1] 孙跃[1] 马欣新[1] 陈士芳[1] 

机构地区：[1]哈尔滨工业大学

出　　处：《材料研究学报》1995年第4期361-363,共3页Chinese Journal of Materials Research

摘　　要：用Ｘ射线光电子能谱（ＸＰＳ）剥层分析方法，研究ＡＩＮ薄膜在大气中加热时的氧化性能．结果表明，常温时ＡＩＮ薄膜稳定；在７００℃加热时，Ａｌ２Ｏ３膜开始增厚．ＡＩＮ被氧化；加热温度愈高，ＡＩＮ被氧化得愈剧烈．The composition, phase structure and oxidized property of AIN films heated in atmosphere at different temperature have been investigated with X-ray photoelectron spectroscopy(XPS) in this paper.The results showed that about 60nm thick of Al2O3 film on the surface of AIN films is formed at ambient temperature. As the AIN films heated at temperature below 700℃, the thickness of Al2O3 film unchanged, AIN films are stable. When the heat temperature reached 700℃, the Al2O3 film becomes thicker and the AIN film begins to be oxidized. The higher is the heating temperature, the more severely is the AIN film being oxidized.

关 键 词：薄膜 氧化 靶材 气相介质 氮化铝 

分 类 号：O484[理学—固体物理]