差分对结构pH－ISFET传感器的研制  

The Development of a Dual ISFET Sensor for H￣+-ion

作　　者：牛蒙年[1] 丁辛芳[1] 袁璟[1] 童勤义[1] 

机构地区：[1]东南大学

出　　处：《传感器技术》1995年第1期25-27,共3页Journal of Transducer Technology

摘　　要：报道了采用集成技术制备的差分对结构ｐＨ－ＩＳＦＴＥＴ传感器及其特性，实验结果表明，ＩＳＦＥＴ器件性能良好，经差分放大器输出可以改善恒流电路测量的响应特性，且有效地抑制温漂、时漂等不稳定因素。采用金膜辅助电极替代甘汞参考电极的差分测量仍有较好的结果。A Dual ISFET based on integrated process is presented The experimental results show that its H+-ion sensing characteristic is good. The H+-ion response feature of constant current electronic is improved by differential amplifer, and other unsteady factors, such as temperature drift, the drift etc., are effectively rejected. Using noble metal film as a counter-electrode of an ideal reference electrode, we can also obtain good results.

关 键 词：H^+离子传感器 传感器 ISFET 差分放大 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]