真空微电子管的研制  

Investigntion and Manufacture of Vacuum Microelectronic Diodes

作　　者：唐国洪[1] 陈德英[1] 

机构地区：[1]东南大学

出　　处：《电子器件》1995年第2期81-85,共5页Chinese Journal of Electron Devices

摘　　要：本文介绍了采用硅的各向异性腐蚀、氧化削尖技术制成了发射性能较好的硅尖阴极阵列，并应用硅键合技术研制成真空微电子二极管；测试结果表明，起始发射电压为５─６伏，反向击穿电压大于５０伏，平均单尖发射电流在阳极电压２０伏时为０．０５μＡ。The Si─tip array exhibiting better emission characteristies has been fabricated byusing silicon anisotropic etching technology and oxidation sharpenning techniques,Based on it thevacuum microelectronic diodes were developed by using silicon wafer bonding teehnique.Measurement results show that the starting emisson voltoge is 5～6V、emisson current is 0.5 mA atanode voltage of 20V,and the backward breaddown voltage is greater than 50V.EEACC:2320,2340E,2550G

关 键 词：真空微电子管 研制 工艺 

分 类 号：TN120.5[电子电信—物理电子学]