BF2^＋注入硅栅PMOSFETγ辐照效应  

γ Radiation Effects on BF_2￣+ Implanted Si-Gate PMOSFET

作　　者：张廷庆[1] 刘家璐[1] 张正选[1] 赵元富[1] 

机构地区：[1]西安电子科技大学微电子所,骊山微电子研究所

出　　处：《电子学报》1995年第2期88-91,共4页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文系统地研究了ＢＦ２＾＋注入硅栅ＰＭＯＳＦＥＴ阈值电压漂移与γ辐照总剂量之间的关系，深入地探讨了ＢＦ２＾＋注入抗γ辐照加固的机理。结果表明，ＢＦ２＾＋注入是一种抗γ辐照加固的新方法。The relation between threshold voltage shift of BF_2￣+ implanted Si-Gate PMOSFET and total γ-radiation dose has been systematically studied,and the mechanism of γ-radiation hardness for BF_2￣+ implantation has also been analysed in detail.The study shows that BF_2￣+ implantation is one of the new methods on γ-radiation hardness.

关 键 词：二氟化硼 离子注入 Γ辐照 硅栅PMOSFET 

分 类 号：TN305.3[电子电信—物理电子学]