扫描隧道谱研究半导体硅掺杂  

Study on Silicon Doping by Scanning Tunneling Spectroscoopy

作　　者：吴敬文[1] 陈浩[1] 丁德胜 陆祖宏[1] 韦钰[1] 

机构地区：[1]东南大学生物医学工程系

出　　处：《东南大学学报（自然科学版）》1995年第6期154-156,共3页Journal of Southeast University：Natural Science Edition

摘　　要：扫描隧道谱研究半导体硅掺杂吴敬文，陈浩，丁德胜，陆祖宏，韦钰（东南大学生物医学工程系南京２１００１８）集成电路的集成度正以惊人的速度每年递增，目前，器件沟道尺寸在实验室中已达到０．０７μｍ，预计在今后的几年里，０．１μｍ加工技术也将走向成熟。随着ＵＬ...Based on the study of silicon surface,for the first time in China,the electronic states of semiconductor surfaces by scanning tunneling spectroscopy(STS)is studied and the influence of doping type and doping concentration on STS are discussed.Doping type specifies the on-direction of STS curves while doping concentration modifies the shapes of the STS curves.Based on the relationship,thedoping types of MOS transistors,which lighten a new path for the inverse analysis of ULSI chips are analyzed.

关 键 词：扫描隧道谱 半导体 硅 掺杂 

分 类 号：TN304.12[电子电信—物理电子学]