重掺砷衬底氧本征吸杂能力的探讨  

INTRINSIC GETTERING EFFECTIVENESS IN HEAVILY ARSENIC-DOPED SILICON

作　　者：谭淞生[1] 朱德光[1] 王自筠[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《应用科学学报》1989年第2期179-181,共3页Journal of Applied Sciences

摘　　要：虽则集成电路级单晶衬底的氧本征吸杂工艺已作过广泛的探讨,重掺衬底的氧本征吸杂研究还仅是近年来才开始的.与体材料相比,采用P/P^+和n/n^+外延材料加工MOS电路有很多优点.自从得克萨斯仪器公司在81年首先成功地在工业上采用硅外延片加工64k RAM以来,MOS电路的衬底已开始从体单晶向外延片的过渡.同时,也激发了研究重掺衬底氧本征吸杂(IG)工艺的兴趣.本实验室通过对重掺砷衬底氧本征吸杂工艺的摸索,体内缺陷的观察,外延层上MOS C-t寿命以及二极管反向特性曲线的测定,以探讨高掺杂情况下,衬底硅材料的本征吸杂能力.The intrinsic gettering effectiveness in heavily arsenic-doped silicon has been investigated. It has been shown that the quality of epitaxial layers is improved by the intrinsic gettering process. The generation lifetime has increased by more than 15 times, and the diode reverse leakage current has been improved by two to three orders of magnitude.Furthermore,the results indicate that the intrinsic gettering effect can perform in a longer distance than the extrinsic gettering effect by heavy boron diffusion.

关 键 词：重掺砷衬底 氧本征吸杂 

分 类 号：TN304[电子电信—物理电子学]