氮化硅超细粉原位生长“无缺陷”α－氮化硅晶须  

PREPARATION OF“DEFECT-FREE”α-Si_3N_4 WHISKERS BY THE IN-SITE GROWTH OF ULTRAFINE SILICON NITRIDE POWDER

作　　者：张克 莫艳 朱凯培 袁正[1] 徐功骅[1] 吴华武[1] 

机构地区：[1]清华大学化学系

出　　处：《硅酸盐学报》1995年第4期373-378,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金

摘　　要：研究了用加压氮化法（ｉｎｃｒｅａｓｉｎｇｐｒｅｓｓｕｒｅｎｉｔｒｉｄａｔｉｏｎ，简称ＩＰＮ法）制备高活性、高纯度的氮化硅超细粉。用这种超细粉在一定温度范围内原位生长出“无缺陷”的α－Ｓｉ＿３Ｎ＿４晶须，其截面直径×长的尺寸分别为（０．１～０．３μｍ）×（１０～３０μｍ）；（０．０２～０．０８μｍ）×（５０～１００μｍ）。在氮化硅基体中加入“无缺陷”α－Ｓｉ＿３Ｎ＿４晶须后，材料的断裂韧性Ｋ＿（Ｉｃ）达１０．５±０．９ＭＰａ·ｍ￣（１／２）；室温强度σ＿（ｆＲＴ）达９２７±２９ＭＰａ；１３００℃时强度σｆ＿（１３００℃）达５５６Ｍｐａ。In the paper, preparation of“defect-free”α-Si_3N_4 whiskers is made by ultrafine Si_3N_4 powder ofhigh activity and high purity. The ultrafine Si_3N_4 powder is prepared by IPN method (increasing pressure nitridation ).It is pointed out that“defect-free”α-Si_3N_4 whiskers can be obtained in the range of temperature between1400～1450℃. Sizes of whiskers are(φ0.1～0.3μm×φ10～30μm)and(φ0.02～0.08μm×φ50～100μm).Whenthe“defect-free”α-Si_3N_4 whiskers are added in the Si_3N_4 base material,K_(Ic) of the material is mearly 10.5±0. 9MPa·m￣(1/2),σf_(RT) approximately 927 ±29MPa,σf_(1300℃)approximately 556MPa.

关 键 词：晶须 氮化硅 超细粉 原位生长 陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业]