电子束和热退火后处理的射频溅射沉积ZrO_2－Y_2O_3薄膜的结构特征  

Microstructure characteristics of ZrO_2-Y_2O_3 films with different post-treatment

作　　者：黄宁康[1] 汪德志[1] 熊兆奎[1] 

机构地区：[1]四川大学原子核科学技术研究所

出　　处：《核技术》1995年第1期10-14,共5页Nuclear Techniques

基　　金：国家自然科学基金

摘　　要：对射频磁控溅射沉积的ＺｒＯ２－１２ｗｔ％Ｙ２Ｏ３薄膜进行了电子束处理和热退火处理．通过ＸＲＤ、ＸＰＳ、ＳＥＭ等的微观分析，研究了薄膜的相结构组成、薄膜主要组成元素的氧化态以及薄膜的形貌特征。并对以提高薄膜增韧性为目的而进行的后处理的方式选择作了讨论。Post-treatment such as electron beam heating and thermal annealing, was usedfor the r.f. magnetron sputtering deposited ZrO2-12wt%Y2O3 films. Studies on phasecomposition, oxidized states of Zr, and characterized morphologies of the films beforeand after post-treatment were made with SEM, XRD and XPS, and the selection ofpost treatment to increase film's durability was also discussed.

关 键 词：薄膜 后处理 结构特征 射频溅射 氧化锆 

分 类 号：O484.1[理学—固体物理] TN305.92[理学—物理]