全反射X荧光分析及其应用  

Application of Total-reflection X-ray Fluorescence Analysis

作　　者：田宇紱 王瑞光[1] 谭继廉 

机构地区：[1]烟台大学物理系,中国科学院近代物理研究所

出　　处：《核物理动态》1995年第3期34-39,共6页

基　　金：国家自然科学基金

摘　　要：近年来，全反射Ｘ荧光分析技术获得突破性进展．从表面及近表层微量、超微量元素分析发展到结构、深度及深度分布的探测．其检测限已达ｐｇ级，硅片杂质检测限达１０８ａｔｏｍｓ／ｃｍ２．文章介绍了该技术的基本理论、特点、国内外最新发展情况及对其今后发展的展望．In recent years a remarkable development has been achieved in total-reflection X-ray fluorescence (TXRF) analysis techniques. The trace and ulera-trace analysis of elements has been made out from surface and near-surface layer to depth and depth profiling as well as layered structures. Absolute detectoion limits has come to pg-level and the least detection limits of 108atoms/cm2 can be reached for surface contamination on St wafers. The basic theory, characteristic, recent international advancement and prospect of TXRF are summarized in this paper.

关 键 词：全反射 微量分析 X荧光分析 

分 类 号：O657.34[理学—分析化学]