n型HgCdTe载流子双极迁移率测量  

Measurement of the Carrier Bipolar Mobility in n-type HgCdTe

作　　者：邵式平[1] 肖绍泽[1] 尹敏[1] 

机构地区：[1]昆明物理研究所

出　　处：《红外技术》1995年第5期15-18,14,共5页Infrared Technology

摘　　要：介绍了两种测量半导体材料载流子双极迁移率的原理和方法。用载流子漂移实验方法测量了ｎ型Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２）材料在８０Ｋ时的双极迁移率，讨论了测量条件对双极迁移率的影响。The drift mobility of excess minority carriers in semiconductor is a fundamental material parameter. Two methods of measuring the bipolar mobility are described. The bipolar mobility of a prototype HgCdTe SPRITE detector operating in 8～14μm at 80K is determined with Shockley-Haynes method. The effect of measurement condition on the bipolar mobility is discussed.

关 键 词：碲镉汞材料 双极迁移率 测试方法 小光点装置 

分 类 号：TN304.207[电子电信—物理电子学]