用TEOSPECVD氧化硅做掩蔽层选择性生长金刚石薄膜  

Selective deposition of diamond films on silicon wafer with TEOSPECVD SiO_2 masks by tungsten filament chemical vapor deposition

作　　者：何奕骅[1] 许春芳[1] 范焕章[1] 孙卓[1] 王学军[1] 郑志豪[1] 朱建中[1] 杨申仲 

机构地区：[1]华东师范大学电子系,华东师范大学物理系,上海冶金所信息功能材料国家重点实验室

出　　处：《华东师范大学学报（自然科学版）》1995年第4期44-48,共5页Journal of East China Normal University(Natural Science)

摘　　要：本文研究了在ＨＦ—ＣＶＤ法中，衬底温度Ｔｓ对ＰＥＴＥＯＳ（等离子体增强正硅酸乙酯）氧化硅—硅衬底上选择性生长金刚石薄膜的影响。结果表明：Ｔｓ变化影响ＰＥＴＥＯＳ氧化硅掩蔽层区域和硅表面金刚石晶粒成核密度。Ｔｓ较低时（７５０—８２０℃），ＰＥＴＥＯＳ氧化硅区域成核密度远小于裸露硅表面；随Ｔｓ升高（＞８２０℃），氧化硅区域成核密度增加很快；当Ｔｓ＞８５０℃时，氧化硅区域成核密度超过硅表面。Polycrystalline diamond films have been selectively deposited on silicon wafer with patterned PETEOS (plasma-enhanced Tetraethylorthosilicate) SiO2 masks by chemical vapor deposition from CH4 and H2 gases using a hot-filament method. The diamond nucleation densities on the SiO2 mask area and the Si surface are affected by the substrate temperature. If the substrate temperature Ts is low (750℃-820℃), the nucleation density on the SiO2 Mask area is much smaller than that on th Si surface. With increasing Ts (> 820℃), the nucleation density on the SiO2 mask area increases rapidly. If Ts is high (>850℃), the nucleation density on the SiO2 mask area will be larger than that on the Si surface.

关 键 词：金刚石 选择性 PETEOS氧化硅 掩蔽层 

分 类 号：TN304.18[电子电信—物理电子学]