准分子激光诱导CVD淀积低电阻率SnO_2薄膜  

SnO_2 THin Film of Low Resistivity Formed by Excimer Laser Induced CVD

作　　者：张健[1] 王庆亚[1] 郑伟[1] 赵方海[1] 张玉书[1] 

机构地区：[1]吉林大学电子工程系,集成光电子学国家重点实验室吉林大学分区

出　　处：《吉林大学自然科学学报》1995年第4期71-73,共3页Acta Scientiarum Naturalium Universitatis Jilinensis

基　　金：国家863项目资助课题

摘　　要：采用准分子激光诱导ＣＶＤ淀积ＳｎＯ＿２透明导电薄膜，并在其生长过程中进行掺杂Ｓｂ的实验，研究了薄膜生长速率及薄膜电阻率与激光能量密度的关系，得到了电阻率为１．４９×１０￣（－３）Ω·ｃｍ的高质量的ＳｎＯ＿２薄膜。Transparent electrically conducting SnO_2 thin film was prepared by excimer laser inducedCVD, and Sb was doped in the thin film during the growth experiment.The variation of the growthrate and the resistivity of the thin film with the energy density of the excimer laser had also been stud-ied.The thin film thus produced has a resistivity of 1.49 × 10￣(-3)Ω· cm and better a quality than be-fore.

关 键 词：准分子激光诱导 掺杂 薄膜 二氧化锡 CVD 

分 类 号：TN304.21[电子电信—物理电子学]