晶格形变能对GaAs－InAs固溶体溶解度的影响  

INFLUENCE OF ELASTIC ENERGY ON MISCIBILITY GAP IN GaAs-InAs SYSTEM

作　　者：乔欢[1] 沈剑韵[1] 李国勋[1] 

机构地区：[1]北京有色金属研究总院物化中心

出　　处：《计算机与应用化学》1995年第2期117-121,共5页Computers and Applied Chemistry

摘　　要：由Ｇａ－Ｉｎ－Ａｓ三元系的热力学分析结果，计算了ＧａＡｓ－ＩｎＡｓ赝二元系相图，讨论了由外延法生成这类化合物时，外延产物发生的晶格弹性形变对ＧａＡｓ和ＩｎＡｓ互溶度的影响。计算结果表明，晶格弹性形变有使溶解度间隙区缩小，甚至消失的效应。The phase diagram of the system GaAs-InAs is calculated by considering the influence of elastic energy,induced by the mismatch of the growing lattice with substrate in the process of epitaxy.The results show that the miscibility gap of the solid solution in this system would be restrained even disappeared when the elastic energy exists.

关 键 词：赝二元系 晶体形变 溶解度 砷化镓 砷化铟 

分 类 号：O642.54[理学—物理化学]