电极结构对硅薄膜生长过程及材料特性的影响  

Influences of Electrode Configuration on Deposition Process and Materials Properties of Silicon Thin Films

作　　者：侯国付[1] 郭群超[1] 任慧志[1] 张晓丹[1] 薛俊明[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所

出　　处：《Journal of Semiconductors》2005年第7期1353-1358,共6页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:G2000028202;G2000028203);教育部(批准号:02167);天津市科委(批准号:043186511)资助项目~~

摘　　要：在制备硅薄膜材料的PECVD系统中,分别采用普通平行板电极和网状电极,在相同的工艺条件下研究了电极结构对硅薄膜材料均匀性、电学性能以及微结构的影响.发现采用网状电极使薄膜(400～500nm)均匀性得到明显改善,在20cm×20cm内不均匀性从±12.6%下降到±2.1%.等离子体发光光谱的测试表明,网状电极可大大提高硅烷的利用率,因而在相同工艺条件下,生长微晶硅材料需要更高的功率密度.文中对实验结果进行了详细的讨论.The effects of a showerhead electrode and longitudinal flow electrode on the growth of silicon films in a PECVD system are studied. The experiments reveal that the showerhead electrode can markedly improve the films thickness uniformity,while the non-uniformity of the 20cm × 20cm silicon films decreases from ±12.6% to ±2.1%. In addition, the optical emission spectra results indicate that the showerhead electrode can greatly enhance the SiH4 decomposition, thus the power density should be increased in order to get microcrystalliine films with the same deposition condition as that of the longitudinal flow electrode.

关 键 词：网状电极 硅薄膜 均匀性 等离子体的发光光谱 

分 类 号：TN304[电子电信—物理电子学]